Page Mode Dynamic Random Access Memory

hardware, storage A technique used to support faster

sequential access to DRAM by allowing any number of accesses

to the currently open row to be made after supplying the rowaddress just once.

The RAS signal is kept active, and with each falling edge

of the CAS signal a new column address can be supplied

and the corresponding bits can be accessed. This is faster

than a full RAS-CAS cycle because only the shorter Column

Access Time needs to be obeyed.

Note that strictly speaking such a DRAM is not a true randomaccess memory since accesses to the open row are faster than

to other locations.

EDO RAM is replacing Page Mode DRAM in many new

microcomputers.

[Is "Fast Page Mode" the same as "Page Mode"?]

(1996-10-06)